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TW045N120C,S1F

Toshiba Semiconductor and Storage
TW045N120C,S1F Preview
Toshiba Semiconductor and Storage
G3 1200V SIC-MOSFET TO-247 45MO
$24.84
Available to order
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$24.3432
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$24.0948
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$23.8464
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$23.598
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TW045N120C,S1F

TW045N120C,S1F

$24.84

Product details

The TW045N120C,S1F from Toshiba Semiconductor and Storage is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the TW045N120C,S1F provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The TW045N120C,S1F finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the TW045N120C,S1F and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 18V
  • Vgs(th) (Max) @ Id: 5V @ 6.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
  • Vgs (Max): +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
  • FET Feature: -
  • Power Dissipation (Max): 182W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3

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