TW045N120C,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
G3 1200V SIC-MOSFET TO-247 45MO
$24.84
Available to order
Reference Price (USD)
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$24.84000
500+
$24.5916
1000+
$24.3432
1500+
$24.0948
2000+
$23.8464
2500+
$23.598
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TW045N120C,S1F
$24.84
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 5V @ 6.7mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1969 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 182W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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