TTA006B,Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F POWER TRANSISTOR TO-126N PC
$0.41
Available to order
Reference Price (USD)
1+
$0.40844
500+
$0.4043556
1000+
$0.4002712
1500+
$0.3961868
2000+
$0.3921024
2500+
$0.388018
Exquisite packaging
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TTA006B,Q
$0.41
Product details
Optimize your circuit performance with the TTA006B,Q, a precision Bipolar Junction Transistor from Toshiba Semiconductor and Storage. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The TTA006B,Q exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. Toshiba Semiconductor and Storage employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The TTA006B,Q combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.
General specs
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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