TTA004B,Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PNP 160V 1.5A TO126N
$0.46
Available to order
Reference Price (USD)
1+
$0.50000
10+
$0.42000
25+
$0.36760
100+
$0.31500
250+
$0.27300
500+
$0.23100
1,000+
$0.17850
2,500+
$0.16275
5,000+
$0.15225
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TTA004B,Q
$0.46
Product details
Enhance your electronic designs with the TTA004B,Q, a premium Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage. This single BJT transistor belongs to the Discrete Semiconductor Products family and is engineered for optimal switching and amplification tasks. The TTA004B,Q features low saturation voltage and high current gain, ensuring efficient operation in diverse circuits. Its excellent thermal performance prevents overheating, even during prolonged use. The transistor's reliable switching speed makes it suitable for both analog and digital applications. Common uses include audio amplifiers, power regulators, and signal processing modules. Automotive systems, industrial controls, and consumer electronics can all benefit from this versatile component. The TTA004B,Q is designed to meet rigorous quality standards, providing long-term reliability. Compact and lightweight, it's perfect for space-constrained applications. Ready to incorporate this high-quality BJT into your next project? Contact us for more details and pricing options tailored to your needs.
General specs
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
- Power - Max: 10 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126N
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