TRS8E65F,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DODE SCHOTTKY 650V TO220
$3.98
Available to order
Reference Price (USD)
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$3.98000
500+
$3.9402
1000+
$3.9004
1500+
$3.8606
2000+
$3.8208
2500+
$3.781
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TRS8E65F,S1Q
$3.98
Product details
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 40 µA @ 650 V
- Capacitance @ Vr, F: 28pF @ 650V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: 175°C (Max)
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