TRS12N65FB,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
SIC SBD TO-247 V=650 IF=12A
$5.30
Available to order
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TRS12N65FB,S1Q
$5.30
Product details
Optimize your power management systems with the TRS12N65FB,S1Q rectifier diode from Toshiba Semiconductor and Storage, a standout in the Diodes - Rectifiers - Arrays category. This diode excels in high-frequency applications, offering fast recovery times and low power dissipation. Its rugged design ensures durability in harsh environments, making it suitable for military and aerospace applications. The TRS12N65FB,S1Q is also widely used in medical devices, where precision and reliability are paramount. In industrial settings, it enhances the performance of CNC machines and servo drives. For consumer electronics, this diode is a popular choice for laptops, tablets, and smartphones. Its versatility extends to renewable energy systems, where it improves the efficiency of micro-inverters and power optimizers. Upgrade to the TRS12N65FB,S1Q and experience top-tier rectification technology. Request a sample or place your order today to see the difference for yourself.
General specs
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 650 V
- Operating Temperature - Junction: 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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