TRS12E65F,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DODE SCHOTTKY 650V TO220
$5.86
Available to order
Reference Price (USD)
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$5.86000
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$5.8014
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$5.7428
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$5.6842
2000+
$5.6256
2500+
$5.567
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TRS12E65F,S1Q
$5.86
Product details
The TRS12E65F,S1Q by Toshiba Semiconductor and Storage is a premium-quality single rectifier diode designed for demanding electronic applications. This component offers outstanding rectification efficiency with low forward voltage drop, ensuring optimal power conversion performance. Its robust construction features advanced junction technology for improved current handling and thermal stability. The diode's fast switching characteristics make it ideal for high-frequency power supplies and switching regulators. Industrial applications include welding equipment, elevator controls, and factory automation systems. The TRS12E65F,S1Q also excels in renewable energy systems such as wind turbine converters. Key benefits include excellent reverse recovery properties and consistent operation across temperature extremes. Designed for reliability, this diode meets rigorous industry standards for quality and performance. Whether for prototyping or mass production, the TRS12E65F,S1Q delivers exceptional results. Submit your inquiry now to access this high-performance rectifier solution for your technical requirements.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 12A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 90 µA @ 650 V
- Capacitance @ Vr, F: 65pF @ 650V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: 175°C (Max)
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