TPW1R005PL,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 45V 300A 8DSOP
$3.18
Available to order
Reference Price (USD)
5,000+
$1.37200
Exquisite packaging
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TPW1R005PL,L1Q
$3.18
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 2.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 22.5 V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta), 170W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DSOP Advance
- Package / Case: 8-PowerWDFN
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