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TPN1R603PL,L1Q

Toshiba Semiconductor and Storage
TPN1R603PL,L1Q Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 80A 8TSON
$0.96
Available to order
Reference Price (USD)
5,000+
$0.52640
Exquisite packaging
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TPN1R603PL,L1Q

TPN1R603PL,L1Q

$0.96

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 104W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSON Advance (3.1x3.1)
  • Package / Case: 8-PowerVDFN

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