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TPHR6503PL1,LQ

Toshiba Semiconductor and Storage
TPHR6503PL1,LQ Preview
Toshiba Semiconductor and Storage
UMOS9 SOP-ADV(N) PD=210W F=1MHZ
$2.09
Available to order
Reference Price (USD)
1+
$2.09000
500+
$2.0691
1000+
$2.0482
1500+
$2.0273
2000+
$2.0064
2500+
$1.9855
Exquisite packaging
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TPHR6503PL1,LQ

TPHR6503PL1,LQ

$2.09

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 210W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5.75)
  • Package / Case: 8-PowerTDFN

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