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TPH5900CNH,L1Q

Toshiba Semiconductor and Storage
TPH5900CNH,L1Q Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 150V 9A 8SOP
$1.31
Available to order
Reference Price (USD)
5,000+
$0.50400
Exquisite packaging
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TPH5900CNH,L1Q

TPH5900CNH,L1Q

$1.31

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 59mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 75 V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN

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