Shopping cart

Subtotal: $0.00

TPH1R306P1,L1Q

Toshiba Semiconductor and Storage
TPH1R306P1,L1Q Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 100A 8SOP
$2.37
Available to order
Reference Price (USD)
1+
$2.37000
500+
$2.3463
1000+
$2.3226
1500+
$2.2989
2000+
$2.2752
2500+
$2.2515
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Toshiba Semiconductor and Storage TPH1R306P1,L1Q is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
TPH1R306P1,L1Q

TPH1R306P1,L1Q

$2.37

Product details

The TPH1R306P1,L1Q from Toshiba Semiconductor and Storage is a technologically advanced single MOSFET transistor belonging to the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - Single). This component sets new standards in power switching efficiency, offering designers a perfect balance between performance and reliability. Engineered with precision, the TPH1R306P1,L1Q demonstrates outstanding characteristics including fast switching capability, low power dissipation, and excellent thermal stability. These features make it particularly suitable for high-frequency applications and power-sensitive designs. The MOSFET finds extensive use in electric vehicle components, industrial welding equipment, and advanced power supply units. It's equally effective in consumer electronics such as high-efficiency LED drivers, smart appliances, and portable electronic devices. For infrastructure applications, the TPH1R306P1,L1Q proves invaluable in telecom power systems, base station equipment, and railway electronics. Its rugged design ensures consistent performance even in challenging operating conditions. Design engineers will appreciate the component's versatility and the design flexibility it offers across multiple voltage and current ranges. To learn more about how the TPH1R306P1,L1Q can enhance your specific application, we invite you to submit an online inquiry. Our technical sales team stands ready to provide detailed product information and purchasing options tailored to your project needs.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 170W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN

Viewed products

Vishay Siliconix

IRF820STRLPBF

$0.00 (not set)
Infineon Technologies

IPD50R500CE

$0.00 (not set)
onsemi

NTMTS0D6N04CTXG

$0.00 (not set)
Renesas Electronics America Inc

RJK5014DPP-00#T2

$0.00 (not set)
Nexperia USA Inc.

BUK963R3-60E,118

$0.00 (not set)
Nexperia USA Inc.

BUK7623-75A,118

$0.00 (not set)
Texas Instruments

CSD17483F4T

$0.00 (not set)
Rohm Semiconductor

SCT3022KLGC11

$0.00 (not set)
Rohm Semiconductor

RCX051N25

$0.00 (not set)
IXYS

IXTT110N10L2-TRL

$0.00 (not set)
Top