TPC8212-H(TE12LQ,M
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET 2N-CH 30V 6A SOP8
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TPC8212-H(TE12LQ,M
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Product details
General specs
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 21mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
- Power - Max: 450mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 8-SOP (5.5x6.0)
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