TPC8125,LQ(S
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage
MOSFET P-CH 30V 10A 8SOP
$0.27
Available to order
Reference Price (USD)
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$0.26956
500+
$0.2668644
1000+
$0.2641688
1500+
$0.2614732
2000+
$0.2587776
2500+
$0.256082
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Product details
General specs
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): +20V, -25V
- Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)