TK8Q60W,S1VQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 8A IPAK
$2.00
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Reference Price (USD)
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$1.82000
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TK8Q60W,S1VQ
$2.00
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
- FET Feature: Super Junction
- Power Dissipation (Max): 80W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Stub Leads, IPak
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