TK65S04N1L,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 65A DPAK
$1.90
Available to order
Reference Price (USD)
2,000+
$0.81900
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TK65S04N1L,LQ
$1.90
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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