TK49N65W,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F POWER MOSFET TRANSISTOR TO2
$11.99
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$11.8701
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$11.7502
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$11.5104
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$11.3905
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TK49N65W,S1F
$11.99
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 49.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 24.6A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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