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TK31Z60X,S1F

Toshiba Semiconductor and Storage
TK31Z60X,S1F Preview
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
$11.83
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Toshiba Semiconductor and Storage TK31Z60X,S1F is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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TK31Z60X,S1F

TK31Z60X,S1F

$11.83

Product details

Enhance your electronic designs with the TK31Z60X,S1F single MOSFET transistor from Toshiba Semiconductor and Storage, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The TK31Z60X,S1F features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the TK31Z60X,S1F particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the TK31Z60X,S1F represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 88mOhm @ 9.4A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4

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