TK2R4A08QM,S4X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
UMOS10 TO-220SIS 80V 2.4MOHM
$3.00
Available to order
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$3.00000
500+
$2.97
1000+
$2.94
1500+
$2.91
2000+
$2.88
2500+
$2.85
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TK2R4A08QM,S4X
$3.00
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.44mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 2.2mA
- Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
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