TK210V65Z,LQ
Toshiba Semiconductor and Storage
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Toshiba Semiconductor and Storage
MOSFET N-CH 650V 15A 5DFN
$2.78
Available to order
Reference Price (USD)
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$2.78000
500+
$2.7522
1000+
$2.7244
1500+
$2.6966
2000+
$2.6688
2500+
$2.641
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Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 610µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DFN-EP (8x8)
- Package / Case: 4-VSFN Exposed Pad