TK17N65W,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 17.3A TO247
$3.67
Available to order
Reference Price (USD)
1+
$3.53000
30+
$2.83500
120+
$2.58300
510+
$2.09161
1,020+
$1.76400
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TK17N65W,S1F
$3.67
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 165W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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