TK14E65W,S1X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 13.7A TO220
$2.72
Available to order
Reference Price (USD)
1+
$3.06000
50+
$2.47000
100+
$2.22300
500+
$1.72900
1,000+
$1.43260
2,500+
$1.38320
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TK14E65W,S1X
$2.72
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 690µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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