TK110U65Z,RQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DTMOS VI TOLL PD=190W F=1MHZ
$4.31
Available to order
Reference Price (USD)
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$4.31000
500+
$4.2669
1000+
$4.2238
1500+
$4.1807
2000+
$4.1376
2500+
$4.0945
Exquisite packaging
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TK110U65Z,RQ
$4.31
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.02mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL
- Package / Case: 8-PowerSFN
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