TK100L60W,VQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 100A TO3P
$33.12
Available to order
Reference Price (USD)
1+
$31.20000
10+
$28.86000
100+
$24.64800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Toshiba Semiconductor and Storage TK100L60W,VQ is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
TK100L60W,VQ
$33.12
Product details
The TK100L60W,VQ single MOSFET transistor from Toshiba Semiconductor and Storage represents excellence in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This high-efficiency component is engineered to meet the evolving demands of modern power electronics, offering superior switching performance and reliability. Key features of the TK100L60W,VQ include optimized gate drive characteristics, low conduction resistance, and excellent thermal properties. These attributes contribute to reduced power losses and improved system efficiency in various applications. The MOSFET performs exceptionally in agricultural automation systems, construction equipment electronics, and marine power systems. For consumer applications, it's ideal for high-performance kitchen appliances, personal care devices, and home entertainment systems. The component also excels in security system power management and emergency lighting applications. With its robust design and electrical efficiency, the TK100L60W,VQ provides design engineers with a reliable solution for diverse power control needs. Whether you're developing new products or upgrading existing systems, this MOSFET offers the performance and durability you require. Ready to explore how the TK100L60W,VQ can enhance your designs? Submit your inquiry through our online portal to receive prompt assistance from our technical sales team, including detailed specifications and competitive pricing information.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V
- FET Feature: Super Junction
- Power Dissipation (Max): 797W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(L)
- Package / Case: TO-3PL
Viewed products
