TK100L60W,VQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 100A TO3P
$33.12
Available to order
Reference Price (USD)
1+
$31.20000
10+
$28.86000
100+
$24.64800
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TK100L60W,VQ
$33.12
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 30 V
- FET Feature: Super Junction
- Power Dissipation (Max): 797W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(L)
- Package / Case: TO-3PL
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