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TJ90S04M3L,LXHQ

Toshiba Semiconductor and Storage
TJ90S04M3L,LXHQ Preview
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 90A DPAK
$1.69
Available to order
Reference Price (USD)
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$1.69000
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$1.6731
1000+
$1.6562
1500+
$1.6393
2000+
$1.6224
2500+
$1.6055
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TJ90S04M3L,LXHQ

TJ90S04M3L,LXHQ

$1.69

Product details

The TJ90S04M3L,LXHQ from Toshiba Semiconductor and Storage is a high-performance single MOSFET transistor designed for efficient power management in various electronic applications. This Discrete Semiconductor Product belongs to the Transistors - FETs, MOSFETs - Single category, offering reliable switching capabilities and low power dissipation. Ideal for both industrial and consumer electronics, this component ensures optimal performance in demanding environments. With its advanced design, the TJ90S04M3L,LXHQ provides enhanced thermal stability and durability, making it a preferred choice for engineers and designers. Whether you're developing power supplies, motor controls, or audio amplifiers, this MOSFET delivers consistent results. Key features include fast switching speeds, low on-resistance, and excellent thermal characteristics. These attributes contribute to improved energy efficiency and reduced heat generation in your circuits. The TJ90S04M3L,LXHQ finds applications in automotive systems, renewable energy solutions, and industrial automation equipment. For power inverters, battery management systems, or LED drivers, this component offers the reliability you need. Upgrade your designs with the TJ90S04M3L,LXHQ and experience superior performance. Contact us today for pricing and availability submit your inquiry online to get started!

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4.3mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
  • Vgs (Max): +10V, -20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK+
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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