SSM6N815R,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET 2N-CH 100V 2A 6TSOPF
$0.47
Available to order
Reference Price (USD)
3,000+
$0.15035
6,000+
$0.14065
15,000+
$0.13580
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SSM6N815R,LF
$0.47
Product details
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
- Power - Max: 1.8W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 6-SMD, Flat Leads
- Supplier Device Package: 6-TSOP-F
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