SSM6N7002BFE,LM
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET 2N-CH 60V 0.2A ES6
$0.35
Available to order
Reference Price (USD)
4,000+
$0.05520
8,000+
$0.04800
12,000+
$0.04080
28,000+
$0.03840
100,000+
$0.03360
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Product details
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA
- Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 3.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
- Power - Max: 150mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6