SSM6N58NU,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET 2N-CH 30V 4A UDFN6
$0.48
Available to order
Reference Price (USD)
3,000+
$0.12540
6,000+
$0.11780
15,000+
$0.11020
30,000+
$0.10640
Exquisite packaging
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SSM6N58NU,LF
$0.48
Product details
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 84mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
- Power - Max: 1W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-UDFN (2x2)
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