SSM6K781G,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 12V 7A 6WCSP6C
$0.19
Available to order
Reference Price (USD)
3,000+
$0.17050
6,000+
$0.15950
15,000+
$0.15400
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SSM6K781G,LF
$0.19
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WCSPC (1.5x1.0)
- Package / Case: 6-UFBGA, WLCSP
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