SSM3K318R,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 2.5A SOT23F
$0.45
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3,000+
$0.11550
6,000+
$0.10850
15,000+
$0.10150
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$0.09800
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SSM3K318R,LF
$0.45
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
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