RN49A1FE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PNP + NPN BRT Q1BSR=2.2KOHM Q1BE
$0.35
Available to order
Reference Price (USD)
1+
$0.35000
500+
$0.3465
1000+
$0.343
1500+
$0.3395
2000+
$0.336
2500+
$0.3325
Exquisite packaging
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RN49A1FE(TE85L,F)
$0.35
Product details
General specs
- Product Status: Obsolete
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms, 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz, 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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