RN49A1(T5L,F,T)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.2W US6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Toshiba Semiconductor and Storage RN49A1(T5L,F,T) is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
RN49A1(T5L,F,T)
$0.00
Product details
Explore the RN49A1(T5L,F,T) from Toshiba Semiconductor and Storage, a premium pre-biased bipolar junction transistor (BJT) array in the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed for superior performance in amplification and switching applications, delivering unmatched reliability and efficiency. The RN49A1(T5L,F,T) features built-in pre-biasing, simplifying circuit design and improving functionality. Its excellent thermal properties ensure stable operation across a broad temperature range. Ideal for automotive electronics, audio systems, and power supplies, the RN49A1(T5L,F,T) provides consistent and precise performance. This transistor array is also commonly found in aerospace applications, security systems, and wearable devices. With high gain and low power consumption, the RN49A1(T5L,F,T) is perfect for energy-sensitive designs. The durable and compact construction of this BJT array makes it a cost-effective choice for various projects. To discover how the RN49A1(T5L,F,T) can meet your specific needs, request a quote today and our specialists will provide you with comprehensive support.
General specs
- Product Status: Obsolete
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
Viewed products
