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RN4607(TE85L,F)

Toshiba Semiconductor and Storage
RN4607(TE85L,F) Preview
Toshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.3W SM6
$0.48
Available to order
Reference Price (USD)
3,000+
$0.08820
6,000+
$0.07938
15,000+
$0.07056
30,000+
$0.06615
75,000+
$0.05880
Exquisite packaging
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Toshiba Semiconductor and Storage RN4607(TE85L,F) is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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RN4607(TE85L,F)

RN4607(TE85L,F)

$0.48

Product details

Upgrade your electronic projects with the RN4607(TE85L,F) from Toshiba Semiconductor and Storage, a superior pre-biased bipolar junction transistor (BJT) array. This product belongs to the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The RN4607(TE85L,F) is designed to deliver high performance in amplification and switching tasks, offering reliability and efficiency. Its pre-biased configuration reduces circuit complexity and enhances functionality. The transistor array boasts excellent thermal management, ensuring stable performance in various environments. Perfect for use in power converters, audio amplifiers, and sensor circuits, the RN4607(TE85L,F) provides consistent and accurate results. It is also commonly utilized in automotive electronics, medical devices, and smart home systems. With its high gain and low power consumption, the RN4607(TE85L,F) is ideal for energy-efficient applications. The robust and compact design of this BJT array makes it a versatile choice for diverse projects. To learn more about the RN4607(TE85L,F) and how it can benefit your designs, contact us for a detailed quote and expert advice.

General specs

  • Product Status: Active
  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 10kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 300mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: SM6

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