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RN2906FE,LF(CT

Toshiba Semiconductor and Storage
RN2906FE,LF(CT Preview
Toshiba Semiconductor and Storage
PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO
$0.04
Available to order
Reference Price (USD)
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$0.04389
500+
$0.0434511
1000+
$0.0430122
1500+
$0.0425733
2000+
$0.0421344
2500+
$0.0416955
Exquisite packaging
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RN2906FE,LF(CT

RN2906FE,LF(CT

$0.04

Product details

General specs

  • Product Status: Active
  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6

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