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RN2704JE(TE85L,F)

Toshiba Semiconductor and Storage
RN2704JE(TE85L,F) Preview
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ESV
$0.49
Available to order
Reference Price (USD)
4,000+
$0.08820
8,000+
$0.07938
12,000+
$0.07056
28,000+
$0.06615
100,000+
$0.05880
Exquisite packaging
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Toshiba Semiconductor and Storage RN2704JE(TE85L,F) is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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RN2704JE(TE85L,F)

RN2704JE(TE85L,F)

$0.49

Product details

The RN2704JE(TE85L,F) by Toshiba Semiconductor and Storage is a state-of-the-art pre-biased bipolar junction transistor (BJT) array, part of the Discrete Semiconductor Products line under Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is crafted to meet the demands of advanced electronic applications, offering high efficiency and dependability. The RN2704JE(TE85L,F) features integrated pre-biasing, which optimizes circuit design and reduces component count. Its superior thermal performance ensures reliable operation in varying conditions. This BJT array is perfect for applications like motor drives, LED lighting, and power management. The RN2704JE(TE85L,F) is also widely used in renewable energy solutions, industrial controls, and communication devices. With its high gain and low saturation voltage, it is ideal for precision applications. The compact and rugged design of the RN2704JE(TE85L,F) makes it suitable for both commercial and industrial use. Engineers seeking a high-performance transistor array will find the RN2704JE(TE85L,F) to be an excellent solution. Submit your inquiry today to receive detailed information on pricing and availability tailored to your needs.

General specs

  • Product Status: Active
  • Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 47kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-553
  • Supplier Device Package: ESV

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