RN2421(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.8A SMINI
$0.09
Available to order
Reference Price (USD)
3,000+
$0.09240
Exquisite packaging
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RN2421(TE85L,F)
$0.09
Product details
The RN2421(TE85L,F) represents Toshiba Semiconductor and Storage's commitment to precision in pre-biased transistor technology. This BJT solution simplifies circuit prototyping with its internally set operating point, eliminating trim potentiometers in amplifier stages. Key attributes include low quiescent current for battery-powered devices, high noise immunity for RF applications, and symmetrical switching times for digital logic interfaces. Real-world implementations range from automotive lighting controls to renewable energy monitoring systems and building automation networks. Its gull-wing leads facilitate visual inspection during quality control processes. Elevate your design's reliability access technical resources and procurement options by inquiring about the RN2421(TE85L,F) today.
General specs
- Product Status: Not For New Designs
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 2mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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