RN2416,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.1A SMINI
$0.03
Available to order
Reference Price (USD)
1+
$0.03244
500+
$0.0321156
1000+
$0.0317912
1500+
$0.0314668
2000+
$0.0311424
2500+
$0.030818
Exquisite packaging
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RN2416,LF
$0.03
Product details
Delivering unmatched consistency, the RN2416,LF pre-biased transistor by Toshiba Semiconductor and Storage features laser-trimmed resistors for precise biasing accuracy. The BJT excels in audio frequency applications due to its low intermodulation distortion, while its robust construction supports repetitive surge currents in switching scenarios. Typical deployments include power supply feedback loops, CNC machine signal conditioning, and photovoltaic system monitoring circuits. The component's MSL3-rated packaging guarantees moisture sensitivity control during storage. Engineers value its parametric consistency across extended production runs, reducing calibration overhead. Initiate your design-in process request free samples of RN2416,LF through our e-commerce platform.
General specs
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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