RN2109MFV,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.1A VESM
$0.03
Available to order
Reference Price (USD)
8,000+
$0.02898
Exquisite packaging
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
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RN2109MFV,L3F
$0.03
Product details
The RN2109MFV,L3F represents Toshiba Semiconductor and Storage's commitment to precision in pre-biased transistor technology. This BJT solution simplifies circuit prototyping with its internally set operating point, eliminating trim potentiometers in amplifier stages. Key attributes include low quiescent current for battery-powered devices, high noise immunity for RF applications, and symmetrical switching times for digital logic interfaces. Real-world implementations range from automotive lighting controls to renewable energy monitoring systems and building automation networks. Its gull-wing leads facilitate visual inspection during quality control processes. Elevate your design's reliability access technical resources and procurement options by inquiring about the RN2109MFV,L3F today.
General specs
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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