RN2102,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.1A SSM
$0.04
Available to order
Reference Price (USD)
3,000+
$0.03623
Exquisite packaging
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RN2102,LF(CT
$0.04
Product details
Toshiba Semiconductor and Storage's RN2102,LF(CT sets the benchmark for pre-biased BJTs with its advanced epitaxial process, yielding superior current handling per footprint area. The device demonstrates exceptional beta linearity under varying collector currents, crucial for instrumentation amplifiers. Its applications span across electric vehicle charging stations, precision agricultural sensors, and industrial IoT gateways. The transistor's hermetically sealed variants address military-grade reliability requirements, while standard versions cater to commercial electronics. Features like solder-dip finish and tape-reel packaging accommodate high-volume manufacturing. Simplify your amplifier designs download the RN2102,LF(CT SPICE model after registering on our technical portal.
General specs
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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