Shopping cart

Subtotal: $0.00

RN1910,LF(CT

Toshiba Semiconductor and Storage
RN1910,LF(CT Preview
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.1W US6
$0.28
Available to order
Reference Price (USD)
3,000+
$0.04830
6,000+
$0.04200
15,000+
$0.03570
30,000+
$0.03360
75,000+
$0.03150
150,000+
$0.02800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Toshiba Semiconductor and Storage RN1910,LF(CT is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
RN1910,LF(CT

RN1910,LF(CT

$0.28

Product details

The RN1910,LF(CT by Toshiba Semiconductor and Storage is a high-performance pre-biased bipolar junction transistor (BJT) array, categorized under Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is engineered to excel in a variety of electronic applications, ensuring reliability and efficiency. The RN1910,LF(CT features integrated pre-biasing, reducing the need for external components and streamlining design. Its outstanding thermal stability guarantees consistent operation under different conditions. This BJT array is ideal for signal amplification, load switching, and interface circuits. The RN1910,LF(CT is also widely used in industrial automation, consumer electronics, and telecommunication systems. With its high gain and low noise characteristics, it is perfect for precision and sensitive applications. The compact and robust design of the RN1910,LF(CT makes it suitable for both mass production and specialized projects. Engineers and designers can trust this transistor array for its consistent quality and performance. For more details on the RN1910,LF(CT and to obtain a personalized quote, please submit an inquiry and our team will assist you promptly.

General specs

  • Product Status: Active
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 4.7kOhms
  • Resistor - Emitter Base (R2): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6

Viewed products

Nexperia USA Inc.

PBLS6024D,115

$0.00 (not set)
onsemi

NSBC144EPDXV6T5

$0.00 (not set)
Toshiba Semiconductor and Storage

RN2511(TE85L,F)

$0.00 (not set)
onsemi

NSTB1002DXV5T1G

$0.00 (not set)
onsemi

NSVUMC3NT1G

$0.00 (not set)
Toshiba Semiconductor and Storage

RN4987,LF(CT

$0.00 (not set)
Toshiba Semiconductor and Storage

RN1703,LF

$0.00 (not set)
onsemi

NSVBC114YPDXV65G

$0.00 (not set)
Nexperia USA Inc.

NHUMB11F

$0.00 (not set)
Rohm Semiconductor

UMH3NTN

$0.00 (not set)
Top