Shopping cart

Subtotal: $0.00

RN1905FE,LF(CT

Toshiba Semiconductor and Storage
RN1905FE,LF(CT Preview
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.1W ES6
$0.28
Available to order
Reference Price (USD)
4,000+
$0.04830
8,000+
$0.04200
12,000+
$0.03570
28,000+
$0.03360
100,000+
$0.02800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Toshiba Semiconductor and Storage RN1905FE,LF(CT is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
RN1905FE,LF(CT

RN1905FE,LF(CT

$0.28

Product details

The RN1905FE,LF(CT from Toshiba Semiconductor and Storage is a high-performance pre-biased bipolar junction transistor (BJT) array designed for efficient switching and amplification applications. This product is part of the Discrete Semiconductor Products category, specifically tailored for Transistors - Bipolar (BJT) - Arrays, Pre-Biased. It offers excellent thermal stability and consistent performance, making it ideal for various electronic circuits. The RN1905FE,LF(CT ensures reliable operation in compact designs, providing engineers with a versatile solution for their projects. With its robust construction and advanced technology, this BJT array is a must-have for modern electronics. Key features include integrated pre-biasing for simplified circuit design, low power consumption, and high gain. These transistors are perfect for applications requiring precise control and signal amplification. The RN1905FE,LF(CT is widely used in automotive electronics, industrial control systems, and consumer electronics. Its compact form factor and high reliability make it suitable for space-constrained applications. For pricing and availability, submit an inquiry today and let our team assist you with your specific requirements.

General specs

  • Product Status: Active
  • Transistor Type: 2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1): 2.2kOhms
  • Resistor - Emitter Base (R2): 47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6

Viewed products

onsemi

NSVMUN5213DW1T3G

$0.00 (not set)
onsemi

NSBC124EDXV6T1G

$0.00 (not set)
Toshiba Semiconductor and Storage

RN4990FE,LXHF(CT

$0.00 (not set)
onsemi

NSBA115TDP6T5G

$0.00 (not set)
Nexperia USA Inc.

PUMD12,115

$0.00 (not set)
Nexperia USA Inc.

PQMD2Z

$0.00 (not set)
Toshiba Semiconductor and Storage

RN1910,LXHF(CT

$0.00 (not set)
onsemi

NSVMUN5135DW1T1G

$0.00 (not set)
Rohm Semiconductor

EMH1FHAT2R

$0.00 (not set)
Rohm Semiconductor

UMA9NTR

$0.00 (not set)
Top