RN1903FE,LXHF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q TR NPNX2 Q1BSR=22KOHM
$0.39
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RN1903FE,LXHF(CT
$0.39
Product details
The RN1903FE,LXHF(CT by Toshiba Semiconductor and Storage is a high-performance pre-biased bipolar junction transistor (BJT) array, categorized under Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is engineered to excel in a variety of electronic applications, ensuring reliability and efficiency. The RN1903FE,LXHF(CT features integrated pre-biasing, reducing the need for external components and streamlining design. Its outstanding thermal stability guarantees consistent operation under different conditions. This BJT array is ideal for signal amplification, load switching, and interface circuits. The RN1903FE,LXHF(CT is also widely used in industrial automation, consumer electronics, and telecommunication systems. With its high gain and low noise characteristics, it is perfect for precision and sensitive applications. The compact and robust design of the RN1903FE,LXHF(CT makes it suitable for both mass production and specialized projects. Engineers and designers can trust this transistor array for its consistent quality and performance. For more details on the RN1903FE,LXHF(CT and to obtain a personalized quote, please submit an inquiry and our team will assist you promptly.
General specs
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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