RN1417,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A SMINI
$0.17
Available to order
Reference Price (USD)
1+
$0.17000
500+
$0.1683
1000+
$0.1666
1500+
$0.1649
2000+
$0.1632
2500+
$0.1615
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RN1417,LF
$0.17
Product details
The RN1417,LF pre-biased bipolar transistor by Toshiba Semiconductor and Storage combines switching speed and analog performance in a single cost-optimized package. Its innovative design minimizes storage time for clean pulse edges in digital applications while maintaining linearity for small-signal processing. Common implementations involve USB power delivery controllers, building security system interfaces, and drone motor drivers. The component's MSOP-8 package provides separate emitter and collector pins for layout flexibility. With 100% automated testing ensuring parameter compliance, this solution reduces incoming inspection overhead. Start your evaluation purchase RN1417,LF evaluation kits directly from our authorized distributors with overnight shipping options.
General specs
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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