RN1416,LXHF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q SINGLE NPN Q1BSR=4.7K
$0.35
Available to order
Reference Price (USD)
1+
$0.35000
500+
$0.3465
1000+
$0.343
1500+
$0.3395
2000+
$0.336
2500+
$0.3325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Toshiba Semiconductor and Storage RN1416,LXHF is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
RN1416,LXHF
$0.35
Product details
Engineered for efficiency, the RN1416,LXHF pre-biased BJT by Toshiba Semiconductor and Storage delivers superior signal amplification in compact packages. Its built-in bias network eliminates external components, reducing board space and assembly costs. The transistor excels in load switching, LED driving, and audio pre-amplification scenarios. Notable characteristics involve thermal shutdown protection, wide operating temperature ranges, and compatibility with automated pick-and-place systems. Industries leveraging this solution include industrial automation (PLC signal conditioning), consumer electronics (battery management systems), and telecommunications (signal repeaters). Streamline your BOM with this versatile component request a quote now for lead time details.
General specs
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
Viewed products
