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RN1416,LF

Toshiba Semiconductor and Storage
RN1416,LF Preview
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A SMINI
$0.20
Available to order
Reference Price (USD)
3,000+
$0.03481
6,000+
$0.03140
15,000+
$0.02730
30,000+
$0.02457
75,000+
$0.02184
150,000+
$0.01820
Exquisite packaging
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EMS 3-7 days

Toshiba Semiconductor and Storage RN1416,LF is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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RN1416,LF

RN1416,LF

$0.20

Product details

Toshiba Semiconductor and Storage's RN1416,LF redefines reliability in pre-biased bipolar transistors, featuring a monolithic design that combines transistor and bias resistors. The device demonstrates exceptional linearity for analog circuits while maintaining low harmonic distortion. Its ESD protection and moisture-resistant packaging ensure longevity in harsh environments. Primary applications encompass smart home controllers, HVAC system interfaces, and robotics motor drivers. The transistor's fast switching capability suits pulse-width modulation (PWM) designs, whereas its stable DC gain benefits sensor signal chains. For engineers seeking drop-in replacements for discrete solutions, the RN1416,LF offers immediate performance upgrades. Contact our sales team for application notes and sample requests.

General specs

  • Product Status: Active
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 4.7 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini

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