Shopping cart

Subtotal: $0.00

RN1413,LXHF

Toshiba Semiconductor and Storage
RN1413,LXHF Preview
Toshiba Semiconductor and Storage
AUTO AEC-Q NPN Q1BSR=47K, VCEO=5
$0.35
Available to order
Reference Price (USD)
1+
$0.35000
500+
$0.3465
1000+
$0.343
1500+
$0.3395
2000+
$0.336
2500+
$0.3325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Toshiba Semiconductor and Storage RN1413,LXHF is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
RN1413,LXHF

RN1413,LXHF

$0.35

Product details

The RN1413,LXHF pre-biased bipolar transistor by Toshiba Semiconductor and Storage combines switching speed and analog performance in a single cost-optimized package. Its innovative design minimizes storage time for clean pulse edges in digital applications while maintaining linearity for small-signal processing. Common implementations involve USB power delivery controllers, building security system interfaces, and drone motor drivers. The component's MSOP-8 package provides separate emitter and collector pins for layout flexibility. With 100% automated testing ensuring parameter compliance, this solution reduces incoming inspection overhead. Start your evaluation purchase RN1413,LXHF evaluation kits directly from our authorized distributors with overnight shipping options.

General specs

  • Product Status: Active
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini

Viewed products

NXP USA Inc.

PDTC123YE,115

$0.00 (not set)
onsemi

NSBA123TF3T5G

$0.00 (not set)
Rohm Semiconductor

DTC643TUT106

$0.00 (not set)
Toshiba Semiconductor and Storage

RN1402,LF

$0.00 (not set)
onsemi

MUN5230T1G

$0.00 (not set)
Rohm Semiconductor

DTB113ZCHZGT116

$0.00 (not set)
Rohm Semiconductor

DTA043TEBTL

$0.00 (not set)
Rohm Semiconductor

DTA113ZKAT146

$0.00 (not set)
Diodes Incorporated

DDTA113TCA-7-F

$0.00 (not set)
Diodes Incorporated

DDTA142TU-7

$0.00 (not set)
Top