RN1308,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A USM
$0.03
Available to order
Reference Price (USD)
3,000+
$0.03213
6,000+
$0.02898
15,000+
$0.02520
30,000+
$0.02268
75,000+
$0.02016
150,000+
$0.01680
Exquisite packaging
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RN1308,LF
$0.03
Product details
Toshiba Semiconductor and Storage's RN1308,LF redefines reliability in pre-biased bipolar transistors, featuring a monolithic design that combines transistor and bias resistors. The device demonstrates exceptional linearity for analog circuits while maintaining low harmonic distortion. Its ESD protection and moisture-resistant packaging ensure longevity in harsh environments. Primary applications encompass smart home controllers, HVAC system interfaces, and robotics motor drivers. The transistor's fast switching capability suits pulse-width modulation (PWM) designs, whereas its stable DC gain benefits sensor signal chains. For engineers seeking drop-in replacements for discrete solutions, the RN1308,LF offers immediate performance upgrades. Contact our sales team for application notes and sample requests.
General specs
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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