RN1110,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A SSM
$0.04
Available to order
Reference Price (USD)
3,000+
$0.03623
Exquisite packaging
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RN1110,LF(CT
$0.04
Product details
Optimized for space-constrained designs, the RN1110,LF(CT pre-biased BJT from Toshiba Semiconductor and Storage integrates critical biasing elements into a single package. This surface-mount device exhibits minimal leakage currents and consistent hFE characteristics across production batches. Its primary use cases involve power management in wearable devices, interface circuits for industrial sensors, and driver stages in low-voltage displays. The transistor's lead-free construction complies with global environmental standards, while its matte tin plating enhances solderability. Designers appreciate its predictable behavior in temperature-varying conditions, making it suitable for outdoor electronics. Explore volume discounts submit your requirements via our online portal for customized offers.
General specs
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
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