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RN1109,LF(CT

Toshiba Semiconductor and Storage
RN1109,LF(CT Preview
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A SSM
$0.04
Available to order
Reference Price (USD)
3,000+
$0.03623
Exquisite packaging
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RN1109,LF(CT

RN1109,LF(CT

$0.04

Product details

The RN1109,LF(CT pre-biased bipolar transistor by Toshiba Semiconductor and Storage combines switching speed and analog performance in a single cost-optimized package. Its innovative design minimizes storage time for clean pulse edges in digital applications while maintaining linearity for small-signal processing. Common implementations involve USB power delivery controllers, building security system interfaces, and drone motor drivers. The component's MSOP-8 package provides separate emitter and collector pins for layout flexibility. With 100% automated testing ensuring parameter compliance, this solution reduces incoming inspection overhead. Start your evaluation purchase RN1109,LF(CT evaluation kits directly from our authorized distributors with overnight shipping options.

General specs

  • Product Status: Active
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 47 kOhms
  • Resistor - Emitter Base (R2): 22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM

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