MT3S20P(TE12L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 12V 7GHZ PW-MINI
$0.00
Available to order
Reference Price (USD)
1,000+
$0.33000
2,000+
$0.30800
5,000+
$0.29260
10,000+
$0.28050
25,000+
$0.27280
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Toshiba Semiconductor and Storage MT3S20P(TE12L,F) is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
MT3S20P(TE12L,F)
$0.00
Product details
Toshiba Semiconductor and Storage presents the MT3S20P(TE12L,F) a high-reliability RF BJT transistor engineered for critical discrete semiconductor applications. This bipolar junction transistor delivers superior phase linearity and dynamic range performance essential for modern communication systems. Its advanced epitaxial base structure minimizes transit time effects while maintaining excellent current handling capacity. The product features a gold metallization system for optimal contact reliability and corrosion resistance. Engineers will appreciate the well-defined S-parameters and consistent high-frequency characteristics across production lots. Primary implementations include military-grade encrypted communication devices and electronic warfare systems. Commercial applications span point-to-point radio links and cellular small cell infrastructure deployments. In the medical field, it enables precise signal generation in therapeutic ultrasound devices and MRI gradient amplifiers. The MT3S20P(TE12L,F) also serves vital functions in industrial process control systems and automated test equipment. Its compatibility with both leaded and surface-mount assembly processes provides design flexibility. Toshiba Semiconductor and Storage employs rigorous screening protocols to ensure military-specification compliance where required. The transistor comes with complete characterization data and application-specific performance guidelines. Access our online design support tools including impedance matching calculators and thermal modeling software. Contact our technical sales team for assistance selecting the optimal MT3S20P(TE12L,F) variant for your RF power amplification requirements.
General specs
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
- Gain: 16.5dB
- Power - Max: 1.8W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PW-MINI
Viewed products
