MT3S113(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
RF TRANS NPN 5.3V 12.5GHZ SMINI
$0.30
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MT3S113(TE85L,F)
$0.30
Product details
Engineered for excellence, the MT3S113(TE85L,F) RF BJT transistor from Toshiba Semiconductor and Storage sets new benchmarks in discrete semiconductor performance. This bipolar junction transistor offers exceptional gain-bandwidth product characteristics, making it ideal for challenging RF amplification scenarios. The product features advanced doping techniques that enhance carrier mobility while minimizing noise figures. Its symmetrical design allows for flexible circuit configurations in both common emitter and common base topologies. The MT3S113(TE85L,F) demonstrates remarkable stability across temperature variations and supply voltage fluctuations. Industrial applications range from plasma generation systems to laser diode drivers requiring precise current control. In the energy sector, it facilitates efficient power conversion in smart grid communication modules. Medical device manufacturers incorporate this transistor in diagnostic ultrasound machines and patient monitoring equipment. For research institutions, it enables accurate signal processing in particle accelerator controls and radio astronomy receivers. The device's hermetically sealed package option ensures reliability in high-humidity environments. Toshiba Semiconductor and Storage employs state-of-the-art wafer fabrication processes to guarantee consistent performance parameters. Backed by industry-leading technical support and rapid prototyping assistance, the MT3S113(TE85L,F) simplifies your RF design challenges. View our interactive product selector guide or consult with our application engineers for tailored recommendations. Request a quote today to discover how this transistor can enhance your specific application requirements.
General specs
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5.3V
- Frequency - Transition: 12.5GHz
- Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
- Gain: 11.8dB
- Power - Max: 800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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